FLOATING GATE MEMORY CELLS WITH INCREASED COUPLING RATIO,申请号EP20030712560-传众专利搜索

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发明名称	FLOATING GATE MEMORY CELLS WITH INCREASED COUPLING RATIO
摘要
申请公布号	EP1506580(B1)	申请公布日期	2010.07.21
申请号	EP20030712560	申请日期	2003.04.11
申请人	NXP B.V.	发明人	VAN DUUREN, MICHIEL, J.;VAN SCHAIJK, ROBERTUS, T., F.
分类号	H01L21/8247;H01L29/788;H01L27/115;H01L29/423;H01L29/792	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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