PURPOSE: A light emitting device is provided to improve the external quantum efficiency of the light emitting device by forming a concavo-convex part with preset roughness on the surface of an N type semiconductor layer. CONSTITUTION: An N type semiconductor layer(120) is formed on a sapphire substrate(110). An active layer(130) is formed on the N type semiconductor layer. A P type semiconductor layer(140) is formed on the active layer. A transparent electrode layer(150) is formed on the P type semiconductor layer. A concavo-convex part is formed on the substrate of the transparent electrode layer.
