| 摘要 |
PURPOSE: A thin film type solar cell and a manufacturing method thereof are provided to reduce the deposition time for increasing productivity by depositing amorphous silicon at high speed after depositing the amorphous silicon on a p type semiconductor layer at low speed. CONSTITUTION: A front electrode layer(200) is formed on a substrate(100). A p type semiconductor layer(310), an I type semiconductor layer(320), and an N type semiconductor layer(330) are successively formed on the front electrode layer. The I type semiconductor layer includes a first I type semiconductor layer formed on the p type semiconductor layer. The I type semiconductor layer includes a second I type semiconductor layer formed on the first I type semiconductor layer. A rear electrode layer(500) is formed on the n type semiconductor layer. |
