Monitoring a photolithographic process using a scatterometry target

摘要

A method is provided for monitoring a photolithographic process in which a substrate is patterned to form (i) a scatterometry target having a plurality of parallel elongated features, and desirably, (ii) other features each having at least one of a microelectronic function or a micro-electromechanical function. Desirably, each elongated feature of the scatterometry target has a length in a lengthwise direction and a plurality of stress-relief features disposed at a plurality of positions along the length of each elongated feature. A return signal is detected in response to illumination of the scatterometry target. The return signal can be used to determine a result of the photolithographic process.