发明名称 Method for manufacturing semiconductor optical device
摘要 A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer.
申请公布号 US7759148(B2) 申请公布日期 2010.07.20
申请号 US20070837676 申请日期 2007.08.13
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 HANAMAKI YOSHIHIKO;ONO KENICHI
分类号 H01L21/00;H01L33/26;H01L33/36 主分类号 H01L21/00
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