发明名称 |
Method for manufacturing semiconductor optical device |
摘要 |
A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer.
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申请公布号 |
US7759148(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20070837676 |
申请日期 |
2007.08.13 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
HANAMAKI YOSHIHIKO;ONO KENICHI |
分类号 |
H01L21/00;H01L33/26;H01L33/36 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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