发明名称 |
Bonding pad structure to minimize IMD cracking |
摘要 |
A method is disclosed of forming a bonding pad that is immune to IMD cracking. A partially processes semiconductor wafer is provided having all metal levels completed. A blanket dielectric layer is formed over the uppermost metal level. Patterning and etching said dielectric layer horizontal and vertical arrays of trenches are formed passing through the dielectric layer and separating the dielectric layer into cells. The trenches are filled with a conducting material and, after performing CMP, bonding metal patterns are deposited. Wires are bonded onto said bonding metal patters, after which a passivation layer is formed.
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申请公布号 |
US7759797(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20060546078 |
申请日期 |
2006.10.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU CHUNG;LIU YUAN-LUNG;SHIUE RUEY-YUN |
分类号 |
H01L23/528;H01L21/302;H01L21/44;H01L21/4763;H01L23/485 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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