发明名称 |
Selective nitridation of gate oxides |
摘要 |
A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and introducing a second amount of nitrogen into the second feature of the second active device, the second amount of nitrogen being different from the first amount of nitrogen.
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申请公布号 |
US7759260(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20060465030 |
申请日期 |
2006.08.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BURNHAM JAY S;ELLIS-MONAGHAN JOHN J;NAKOS JAMES S;QUINLIVAN JAMES J |
分类号 |
H01L21/38;H01L27/092;H01L21/318;H01L21/74;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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