发明名称 |
Method and material for forming a double exposure lithography pattern |
摘要 |
A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.
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申请公布号 |
US7759253(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20060563805 |
申请日期 |
2006.11.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHING-YU |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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