发明名称 |
Method of making high efficiency UV VLED on metal substrate |
摘要 |
A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps.
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申请公布号 |
US7759146(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20070744717 |
申请日期 |
2007.05.04 |
申请人 |
SEMILEDS OPTOELECTRONICS CO., LTD. |
发明人 |
TRAN CHUONG ANH |
分类号 |
H01L21/00;H01L31/072;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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