发明名称 Ring oscillators for NMOS and PMOS source to drain leakage and gate leakage
摘要 A ring oscillator circuit using only NMOS or only PMOS transistors is described. The ring oscillator circuit uses the equivalent of three transistors to form an oscillator stage, which may be a main component to the ring oscillator: A load transistor, an enable transistor, and a switch transistor. A source of the load transistor may be coupled to a drain of the enable transistor and a source of the enable transistor coupled to a drain of the switch transistor. The load transistor can have three different configurations: 1) a reference circuit with a gate and a drain of the load transistor coupled together; 2) a source to drain leakage monitor circuit with a gate and a source of the load transistor coupled together; and 3) a gate leakage monitor circuit with a drain and the source of the load transistor coupled together. An odd plurality of oscillator stages can be coupled together with an input circuit and an output circuit to form a ring oscillator. Other embodiments are described.
申请公布号 US7760033(B2) 申请公布日期 2010.07.20
申请号 US20070968144 申请日期 2007.12.31
申请人 INTEL CORPORATION 发明人 PODMANIK MILOS;GRAU IWAN
分类号 H03K3/03 主分类号 H03K3/03
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