| 发明名称 |
POWER KEY ON MIS TRANSISTOR |
| 摘要 |
FIELD: electricity. ^ SUBSTANCE: device includes transformer with secondary winding the end of which is connected directly to source of MIS transistor; double-anode stabilitron is introduced, which is connected between the beginning of secondary transformer winding and gate of MIS transistor. ^ EFFECT: improving reliability. ^ 1 dwg |
| 申请公布号 |
RU2395159(C1) |
申请公布日期 |
2010.07.20 |
| 申请号 |
RU20090111835 |
申请日期 |
2009.03.30 |
| 申请人 |
OTKRYTOE AKTSIONERNOE OBSHCHESTVO "INFORMATSIONNYE SPUTNIKOVYE SISTEMY" IM. AKADEMIKA M.F. RESHETNEVA |
发明人 |
MIKHEEV PAVEL VASIL'EVICH;KVAKINA ANZHELIKA ANATOL'EVNA |
| 分类号 |
H03K17/56 |
主分类号 |
H03K17/56 |
| 代理机构 |
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