Semiconductor device design method, semiconductor device design system, and computer program for extracting parasitic parameters

摘要

A design method of a semiconductor device is provided with a mask region setting step of setting a mask region to a layout of the semiconductor device, a parasitic parameter changing step of setting parasitic parameters of a wiring part within the mask region to zero, and a parasitic parameter extraction step of extracting parasitic parameters of either the total layout or a specific part of the layout. The parasitic parameter changing step includes a virtual wiring layer generation step of generating a virtual wiring layer corresponding to the actual wiring layer of the semiconductor device, a parasitic parameter definition step of defining the parasitic parameters of the virtual wiring layer as zero, and a wiring layer conversion step of converting the wiring part within the mask region of the wiring of the actual wiring layer, to the wiring part of the virtual wiring layer.