| 摘要 |
A power semiconductor device includes: a first semiconductor substrate; a second semiconductor layer; a plurality of third semiconductor pillar regions and a plurality of fourth semiconductor pillar regions that are provided in an upper layer of the second semiconductor layer and alternatively arranged along a direction parallel to an upper surface of the first semiconductor substrate; a first main electrode; and a second main electrode. A concentration of first-conductivity-type impurity in a connective portion between the second semiconductor layer and the third semiconductor pillar regions is lower than concentrations of first-conductivity-type impurity in portions of both sides of the connective portion in a direction from the second semiconductor layer to the third semiconductor pillar regions.
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