发明名称 Methodology for bias temperature instability test
摘要 A method for performing a bias temperature instability test on a device includes performing a first stress on the device. After the first stress, a first measurement is performed to determine a first parameter of the device. After the first measurement, a second stress is performed on the device, wherein only the first parameter is measured between the first stress and the second stress. The method further includes performing a second measurement to determine a second parameter of the device after the second stress. The second parameter is different from the first parameter.
申请公布号 US7759962(B2) 申请公布日期 2010.07.20
申请号 US20080252904 申请日期 2008.10.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHIH JIAW-REN;JHA NEERAJ KUMAR;RANJAN RAKESH;EMANI NARESH KUMAR
分类号 G01R31/26 主分类号 G01R31/26
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