发明名称 |
Methodology for bias temperature instability test |
摘要 |
A method for performing a bias temperature instability test on a device includes performing a first stress on the device. After the first stress, a first measurement is performed to determine a first parameter of the device. After the first measurement, a second stress is performed on the device, wherein only the first parameter is measured between the first stress and the second stress. The method further includes performing a second measurement to determine a second parameter of the device after the second stress. The second parameter is different from the first parameter.
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申请公布号 |
US7759962(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20080252904 |
申请日期 |
2008.10.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SHIH JIAW-REN;JHA NEERAJ KUMAR;RANJAN RAKESH;EMANI NARESH KUMAR |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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