Magnetic memory cell and random access memory

摘要

To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.