发明名称 |
Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier |
摘要 |
The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm −3 and which consists of cells, each of which comprises a p− type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm−3 and which is grown on the substrate, a p− type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm−3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm−3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells. Said silicon photoelectric multiplier (variant 2) comprising a n− type conductivity substrate to which a p++-type conductivity whose dope additive concentration ranges from 1018-1020 cm−3 is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separating elements are disposed between the cells.
|
申请公布号 |
US7759623(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20050568646 |
申请日期 |
2005.05.05 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
TESHIMA MASAHIRO;MIRZOYAN RAZMIK;DOLGOSHEIN BORIS ANATOLIEVICH;KLEMIN SERGEY NIKOLAEVICH;POPOVA ELENA VIKTOROVNA;FILATOV LEONID ANATOLIEVICH |
分类号 |
H01J40/14;H01L31/06;G01J3/50;G01T1/24;H01L27/144;H01L27/146;H01L31/107;H01L31/115 |
主分类号 |
H01J40/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|