发明名称 |
Manufacturing method of semiconductor device with a barrier layer and a metal layer |
摘要 |
This invention provides a semiconductor device and a manufacturing method thereof which can minimize deterioration of electric characteristics of the semiconductor device without increasing an etching process. In the semiconductor device of the invention, a pad electrode layer formed of a first barrier layer and an aluminum layer laminated thereon is formed on a top surface of a semiconductor substrate. A supporting substrate is further attached on the top surface of the semiconductor substrate. A second barrier layer is formed on a back surface of the semiconductor substrate and in a via hole formed from the back surface of the semiconductor substrate to the first barrier layer. Furthermore, a re-distribution layer is formed in the via hole so as to completely fill the via hole or so as not to completely fill the via hole. A ball-shaped terminal is formed on the re-distribution layer.
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申请公布号 |
US7759247(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20070822262 |
申请日期 |
2007.07.03 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KAMEYAMA KOJIRO;SUZUKI AKIRA;OKAYAMA YOSHIO |
分类号 |
H01L21/44;H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/48 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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