| 摘要 |
A semiconductor layer containing defects only in a small density, possessing good quality and exhibiting a large ionic bonding property as to GaN, for example, is formed on a semiconductor layer, such as a silicon carbide layer, which is made of a material possessing a small ionicity and exhibiting a strong covalent bonding property. A method for forming a semiconductor layer includes forming on the surface of a first semiconductor layer 102 possessing a first ionicity a second semiconductor layer 103 possessing a second ionicity larger than the first ionicity. The second semiconductor layer 103 is formed while irradiating the surface of the first semiconductor layer existing on the side for forming the second semiconductor layer with electrons in a vacuum.
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