发明名称 |
Critical dimension (CD) control by spectrum metrology |
摘要 |
A method for patterning a substrate includes forming a material layer on the substrate; performing a first etching on the material layer to form a pattern; measuring the pattern of the material layer using an optical spectrum metrology tool; determining whether the measuring indicates that the etching step achieved a predefined result; and producing an etching recipe and performing a second etching of the material layer using the etching recipe if the predefined result was not achieved.
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申请公布号 |
US7759136(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20060530164 |
申请日期 |
2006.09.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUNG CHANG-CHENG;HSIEH HUNG CHANG;CHANG SHIH-MING;WANG WEN-CHUAN;LU CHI-LUN;HSIA ALLEN;HUANG YEN-BIN |
分类号 |
G01R31/26;H01L21/66 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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