发明名称 Critical dimension (CD) control by spectrum metrology
摘要 A method for patterning a substrate includes forming a material layer on the substrate; performing a first etching on the material layer to form a pattern; measuring the pattern of the material layer using an optical spectrum metrology tool; determining whether the measuring indicates that the etching step achieved a predefined result; and producing an etching recipe and performing a second etching of the material layer using the etching recipe if the predefined result was not achieved.
申请公布号 US7759136(B2) 申请公布日期 2010.07.20
申请号 US20060530164 申请日期 2006.09.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUNG CHANG-CHENG;HSIEH HUNG CHANG;CHANG SHIH-MING;WANG WEN-CHUAN;LU CHI-LUN;HSIA ALLEN;HUANG YEN-BIN
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
代理机构 代理人
主权项
地址