发明名称 |
Methods of forming semiconductor devices using embedded L-shape spacers |
摘要 |
A method of forming a semiconductor device that embeds an L-shaped spacer is provided. The method includes defining an L-shaped spacer on each side of a gate region of a substrate and embedding the L-shaped spacers in an oxide layer so that the oxide layer extends over a portion of the substrate a predetermined distance from a lateral edge of the L-shaped spacer. And removing oxide layers to expose the L-shape spacers.
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申请公布号 |
US7759206(B2) |
申请公布日期 |
2010.07.20 |
申请号 |
US20050164567 |
申请日期 |
2005.11.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LUO ZHIJIONG;TEH YOUNG WAY;AJMERA ATUL C. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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