发明名称 |
METHOD OF MANUFACTURING CMOS TRANSISTOR |
摘要 |
<p>PURPOSE: A method for manufacturing a complementary metal-oxide-semiconductor(CMOS) transistor is provided to remove the damaged part in an n-type metal-oxide-semiconductor(MOS) transistor using a mixed solution of ammonium hydroxide, hydrogen peroxide, and deionized water. CONSTITUTION: An insulating layer(110) is formed on a substrate(100). A conductive layer is formed on the insulating layer. A mask pattern, which exposes an n-type MOS transistor region, is formed on the conductive layer. Dopant is implanted to the conductive layer of the n-type MOS transistor region, such that a damaged part is generated on the upper part of the conductive layer. The conductive layer is patterned to form an n-type MOS transistor gate(120n) and a p-type transistor gate(120p).</p> |
申请公布号 |
KR20100082574(A) |
申请公布日期 |
2010.07.19 |
申请号 |
KR20090001940 |
申请日期 |
2009.01.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG, JUN YOUL;YOON, BYOUNG MOON;PARK, CHEOL WOO;LEE, WON JUN;KO, KI HYUNG |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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