| 摘要 |
PURPOSE: A method of forming a Ge-Sb-Te based film and a storage medium are provided to acquire a desired amount of Te while reducing the mixing impediment by a Te source by forming a Te containing material in the passage and/or the reaction space of gas prior to forming a film when forming a Ge-Sb-Te based film using CVD. CONSTITUTION: A method of forming a Ge-Sb-Te based film is as follows. In the state a substrate is outside a container, a Te containing material is previously formed in the passage of and/or the reaction space of gas(process 1). A gate valve is opened and the substrate is put into the container from a gate(process 2). Ge source gas, Sb source gas and Te source gas are flowed by a given amount and the Ge-Sb-Te based film is formed on the substrate(process 3). The supply of the source stops and the container is purged by diluted gas and then the gate valve opens and the film-formed substrate is carried out from the container(process 4).
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