SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor memory device and a method for manufacturing the same are provided to highly integrate the semiconductor memory device by forming a cell unit with one transistor. CONSTITUTION: An embedded insulating layer(12) covers the entire upper surface of a substrate(10). An active pattern includes two protrusions(16a). A concave part is generated between the protrusions. First and second dopant regions(20a, 20b) are formed on the upper side of the protrusions of the active pattern. A gate insulating layer is formed on the surface of the external sidewall of the active pattern. A gate electrode(24) is formed on the gate insulating layer.