OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR COMPRISING THE SAME

摘要

PURPOSE: An oxide semiconductor and a thin film transistor including the same are provided to improve the stability and the reliability of the oxide semiconductor by adding hafnium to an indium oxide. CONSTITUTION: An oxide layer(12) is formed on a substrate(11) by a thermal oxidation process. A gate electrode(13) is formed on the oxide layer. A gate insulating layer(14) is formed on the substrate and the gate electrode. A channel(15) is formed on the gate insulating layer by adding hafnium to an indium oxide. A source(16a) and a drain(16b) are formed on both sides of the channel and the insulating layer.