| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus capable of efficiently suppressing diffusion of metal contained in the wiring. Ž<P>SOLUTION: A semiconductor apparatus has: an insulating layer formed on a semiconductor substrate; the wiring that contains a metal formed in the insulating layer; a first region that contacts with an upper surface of the wiring and has the same width as that of the upper surface of the wiring; a first barrier metal including a second region having a width wider than that of the first region and which is located on the first region; and a second barrier metal that contacts with a lower surface and a side surface of the wiring, a side surface of the first region, and a lower surface of the second region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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