| 摘要 |
To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt.
|
