发明名称 Horizontally graded structures for electrochemical and electronic devices
摘要 The present invention provides a graded multilayer structure, comprising a support layer (1) and at least 10 layers (2, 3) forming a graded layer, wherein each of the at least 10 layers (2, 3) is at least partially in contact with the support layer (1), wherein the at least 10 layers (2, 3) differ from each other in at least one property selected from layer composition, porosity and conductivity, and wherein the at least 10 layers (2, 3) are arranged such that the layer composition, porosity and/or conductivity horizontally to the support layer (1) forms a gradient over the total layer area. The present invention further provides a graded multilayer structure, comprising a support layer (1) and at least two layers (2, 3) forming a graded layer, wherein each of the at least two layers (2, 3) is at least partially in contact with the support layer (1), wherein the at least two layers (2, 3) differ from each other in at least one property selected from layer composition, porosity and conductivity, wherein the at least two layers (2, 3) are arranged such that the layer composition, porosity and/or conductivity horizontally to the support layer (1) forms a gradient over the total layer area, and wherein the overall thickness of the graded layer comprising the at least two layers (2, 3) is more than 5 µm.
申请公布号 AU2008203849(B8) 申请公布日期 2010.07.15
申请号 AU20080203849 申请日期 2008.08.13
申请人 TECHNICAL UNIVERSITY OF DENMARK 发明人 SOREN LINDEROTH;PETER HALVOR LARSEN;MOGENS MOGENSEN;PETER VANG HENDRIKSEN
分类号 B32B37/22;B32B15/04;H01M8/02 主分类号 B32B37/22
代理机构 代理人
主权项
地址