发明名称 PLASMA TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To rapidly measure the distribution of light emission intensity of plasma generated in a vacuum processing chamber with a simple structure. <P>SOLUTION: This plasma treatment device including the vacuum processing chamber 2, a sample base 7 for mounting and holding a sample in the vacuum processing chamber, and a plasma generation means 4 to generate plasma by supplying high-frequency energy to a process gas introduced in the vacuum processing chamber includes: an optical receiver 13 for receiving light emitted from the generated plasma in the outside of the vacuum processing chamber; a light reception adjuster 14 arranged between the optical receiver and the vacuum processing chamber for adjusting the range of plasma introduced into the optical receiver within the light emitted from the plasma; and a control device 16 for controlling the plasma treatment device based on a light reception amount obtained by changing the light reception range by the optical receiver by adjusting the light reception adjuster. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010157556(A) 申请公布日期 2010.07.15
申请号 JP20080334001 申请日期 2008.12.26
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SHIRAISHI DAISUKE;INOUE TOMOKI;NAKAMOTO SHIGERU
分类号 H01L21/3065;H05H1/00;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
主权项
地址