| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of suppressing deterioration of data of a non-select cell, while maintaining the speed of data writing to be high. Ž<P>SOLUTION: The semiconductor memory device includes: a semiconductor layer 30; a source layer S and a drain layer D provided in the semiconductor layer; an electrically floating body region B provided in the semiconductor layer between the source layer and the drain layer, and accumulating or discharging charges for storing logical data; a gate dielectric film 50 provided on the body region; and a first gate electrode G1 and a second gate electrode G2 provided on one body region via the gate dielectric film, the first and the second gate electrodes being separated from each other in channel length directions of a memory cell comprising the source layer, the drain layer, and the body region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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