METAL THIN FILM AND METHOD FOR MANUFACTURING THE SAME, DIELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a new metal thin film to be suitably used as an electrode composing a dielectric capacitor and to provide a method for manufacturing the metal thin film. SOLUTION: The metal thin film is formed on a given base and is a thin film of a metal having a face-centered cubic crystal structure, wherein the thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel with a surface of the base appears on the surface of the thin film. In the metal thin film, the metal with the face-centered cubic crystal structure can include at least one element selected from a group of Pt, Ir and Ru. COPYRIGHT: (C)2010,JPO&INPIT