| 摘要 |
The present invention provides a pixel array having a three-dimensional structure and an image sensor having the pixel array. The pixel array has a three-dimensional structure in which a photodiode, a transfer transistor, a reset transistor, a convert transistor, and a select transistor are divided and formed on a first wafer and a second wafer, chips on the first and second wafers are connected in a vertical direction after die-sorting the chips. The first wafer includes a plurality of photodiodes for generating electric charges corresponding to an incident video signal, a plurality of transfer transistors for transferring the electric charges generated by the photodiodes to floating diffusion regions, a plurality of STIs circling one of the photodiodes and one transfer transistor connected to the one photodiode, a first super-contact which extends from a lower portion of the plurality of the STIs to a lower surface of the wafer, and a second super-contact which penetrates the plurality of the STIs and a portion of the first super-contact. The electric charges accumulated in the floating diffusion regions are transferred to the second wafer through the second super-contact.
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