| 摘要 |
A semiconductor device, includes: a semiconductor layer including a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type, the second semiconductor region having a first conductivity type impurity concentration lower than a first conductivity type impurity concentration of the first semiconductor region; a source region of a second conductivity type provided on the first semiconductor region; a drain region of the second conductivity type provided on the second semiconductor region; an insulating film provided on the semiconductor layer between the source region and the drain region; a gate electrode provided on the insulating film; and a drift region of the second conductivity type provided in a surface side portion of the semiconductor layer between the gate electrode and the drain region, the drift region being in contact with the drain region and having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the drain region.
|
