| 摘要 |
The invention provides an ICP source plasma processing apparatus having improved the uniformity and ignition property of plasma. A plasma processing apparatus comprises a vacuum processing chamber 1, a dome-shaped vacuum reactor top member 12 formed of an insulating material, a gas supply port 3, a high frequency induction antenna (antenna) 7 disposed on an upper portion outside the vacuum processing chamber 1, magnetic coils 81 and 82 for forming a magnetic field with in the vacuum processing chamber 1, a yoke 83 for controlling the distribution of magnetic field, a plasma generating high frequency power supply 51 for supplying high frequency current to the antenna 7, and a power supply for supplying power to the magnetic field coil, wherein the antenna 7 is divided into n-number of high frequency induction antenna elements 7-1 (not shown), 7-2, 7-3 (not shown) and 7-4, the divided antenna elements are arranged tandemly on a single circumference, high frequency currents having wavelengths respectively delayed by λ/n of the wavelength of the high frequency power supply are supplied via delay means 7-2 through 7-4 to the respective tandemly arranged antenna elements in order in a right rotation, and a magnetic field is applied via the magnetic field coil so as to cause an ECR phenomenon.
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