发明名称 CMOS THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME
摘要 A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electrode. The shared gate electrode is used as a doping or implantation mask in the formation of the source and drain regions of the poly-silicon transistor.
申请公布号 US2010176395(A1) 申请公布日期 2010.07.15
申请号 US20100686550 申请日期 2010.01.13
申请人 SAMSUNG MOBILE DISPLAY CO., LTD. 发明人 CHOI JONG-HYUN;KIM SUNG-HO
分类号 H01L29/24;H01L21/8238;H01L29/786;H01L33/26 主分类号 H01L29/24
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