发明名称 |
CMOS THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME |
摘要 |
A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electrode. The shared gate electrode is used as a doping or implantation mask in the formation of the source and drain regions of the poly-silicon transistor.
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申请公布号 |
US2010176395(A1) |
申请公布日期 |
2010.07.15 |
申请号 |
US20100686550 |
申请日期 |
2010.01.13 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
CHOI JONG-HYUN;KIM SUNG-HO |
分类号 |
H01L29/24;H01L21/8238;H01L29/786;H01L33/26 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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