THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME

摘要

A thin film transistor which has a compound semiconductor including oxygen as an activation layer, a method of manufacturing the thin film transistor, and a flat panel display device having the thin film transistor, of which the thin film transistor comprises: a gate electrode formed on a substrate; an activation layer formed on the gate electrode, insulated from the gate electrode by a gate insulating film, and formed of a compound semiconductor including oxygen; a passivation layer formed on the activation layer; and source and drain electrodes formed to contact the activation layer, wherein the passivation layer includes titanium oxide (TiOx) or titanium oxynitride (TiOxNy).