发明名称 |
Semiconductor device, method for manufacturing the same, and multilayer substrate having the same |
摘要 |
A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit. |
申请公布号 |
US2010176480(A1) |
申请公布日期 |
2010.07.15 |
申请号 |
US20090654707 |
申请日期 |
2009.12.29 |
申请人 |
DENSO CORPORATION |
发明人 |
SENDA KOUJI;SHIRAKI SATOSHI;MAEDA YUKIHIRO;HIROSE SHINICHI;FUJII TETSUO;NAKANO TAKASHI |
分类号 |
H01L27/06;H01L21/78 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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