SEMICONDUCTOR DEVICES HAVING STRAINED CHANNELS AND METHODS OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device including a strained channel and a method for manufacturing the same are provided to increase the mobility of a carrier in a channel by forming first and second source/drains applying a compressive strain to p-type and n-type channels. CONSTITUTION: A substrate(100) includes a first element region(104) and a second element region(106). A first conductive type first channel(105) and a first gate structure(110) on the first channel are located in the first element region. A second conductive type second channel(107) and a second gate structure(120) on the second channel are located in the second element region. The first gate structure includes a first insulating layer pattern(112), a first gate conductive layer pattern, and a first gate mask pattern(116). A second gate structure includes a second insulating layer pattern(122), a second gate conductive layer pattern(124), and a second gate mask pattern(126).