发明名称 HIGH-RATE POLISHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for polishing with a polishing pad for an increase in wafer yield by increasing removal rate to increase throughput. <P>SOLUTION: A substrate is fixed to a carrier fixture having a channel-free surface. The method includes a process of fixing the substrate to the carrier fixture with the channel-free surface adjacent and parallel to a polishing surface of the polishing pad. The polishing pad has multiple grooves with high-rate paths. The method includes a process of applying a polishing medium to the polishing pad adjacent to the carrier fixture, and a process of polishing the substrate with the polishing pad and the polishing medium by rotating the polishing pad and the carrier fixture, wherein the channel-free surface of the carrier fixture is pressed by the polishing pad to prevent the flow of the polishing medium to the substrate, and the high-rate groove paths cross the carrier fixture to promote the flow of the polishing medium to the substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010155338(A) 申请公布日期 2010.07.15
申请号 JP20090288689 申请日期 2009.12.21
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 MULDOWNEY GREGORY P
分类号 B24B37/04;H01L21/304 主分类号 B24B37/04
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