发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To present a pattern that monitors erosion amount after CMP for tungsten and the like. Ž<P>SOLUTION: An erosion level generated during plug CMP is evaluated using a monitoring pattern that specifies a hole array size split (a), and a length split of space between arrays split (b) at a certain level. As an effect due to the hole array size increases in accordance with the hole array size, monitoring is performed to check whether the erosion amount reaches a point of saturation at a specific size. Furthermore, monitoring is performed of the length of space that is affected between the arrays. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010157719(A) 申请公布日期 2010.07.15
申请号 JP20090289322 申请日期 2009.12.21
申请人 DONGBU HITEK CO LTD 发明人 JEONG SEONG-HUN
分类号 H01L21/3205;H01L21/28;H01L21/304;H01L21/66;H01L21/82;H01L23/52 主分类号 H01L21/3205
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