发明名称 |
METHOD OF MANUFACTURING POLYSILICON, THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE INCLUDING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, a method of manufacturing the thin film transistor, and an organic electroluminescent display device including this. SOLUTION: There is disclosed a thin film transistor including: a substrate; a buffer layer located on the substrate; a first semiconductor layer and a second semiconductor layer positioned on the buffer layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating film insulating the first semiconductor layer and the second semiconductor layer from the gate electrode; and a source/drain electrode insulated from the gate electrode, and partially connected to the second semiconductor layer, wherein the second semiconductor layer is positioned at the upper part of the first semiconductor layer. There is disclosed the method of manufacturing the thin film transistor. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010157676(A) |
申请公布日期 |
2010.07.15 |
申请号 |
JP20090096106 |
申请日期 |
2009.04.10 |
申请人 |
SAMSUNG MOBILE DISPLAY CO LTD |
发明人 |
LEE DONG-HYUN;LEE KI-YONG;SEO JIN-WOOK;YANG TAE-HOON;LISACHENKO MAXIM;PARK BYOUNG-KEON;LEE KIL-WON;JUNG JAE-WAN |
分类号 |
H01L29/786;H01L21/20;H01L21/336;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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