发明名称 Image Sensing System And Method Utilizing A Mosfet
摘要 A unit cell includes a MOSFET and an integration capacitor. The MOSFET includes a source, a drain, and a gate. The drain is coupled to the source, and the MOSFET is operable to store a first portion of an electric charge corresponding to a detected light intensity. The integration capacitor includes a first end and a second end. The first end is coupled to the drain of the MOSFET and the second end is coupled to a ground. The integration capacitor is operable to store a second portion of the electric charge corresponding to the detected light intensity.
申请公布号 US2010177229(A1) 申请公布日期 2010.07.15
申请号 US20090354467 申请日期 2009.01.15
申请人 RAYTHEON COMPANY 发明人 VAMPOLA JOHN L.;HARRIS MICKY R.
分类号 H04N5/335 主分类号 H04N5/335
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