发明名称 |
NITRIDE CRYSTAL MANUFACTURING METHOD, NITRIDE CRYSTAL, AND DEVICE FOR MANUFACTURING SAME |
摘要 |
<p>The objective is to efficiently grow a high-purity nitride crystal with a low oxygen concentration by means of an ammonothermal method. This nitride crystal manufacturing method is characterized in that a reactive gas which reacts with ammonia to produce a mineralizer, and ammonia, are brought into contact in a reaction chamber or in a closed circuit connected to a reaction chamber, producing the mineralizer, and in the presence of the aforementioned ammonia and the aforementioned mineralizer a nitride crystal is grown by an ammonothermal method.</p> |
申请公布号 |
WO2010079814(A1) |
申请公布日期 |
2010.07.15 |
申请号 |
WO2010JP50118 |
申请日期 |
2010.01.07 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION;TOHOKU UNIVERSITY;MIKAWA, YUTAKA;KIYOMI, MAKIKO;KAGAMITANI, YUJI;ISHIGURO, TORU |
发明人 |
MIKAWA, YUTAKA;KIYOMI, MAKIKO;KAGAMITANI, YUJI;ISHIGURO, TORU |
分类号 |
C30B9/06;B01J3/00;C30B7/10;C30B7/14 |
主分类号 |
C30B9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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