发明名称 NITRIDE CRYSTAL MANUFACTURING METHOD, NITRIDE CRYSTAL, AND DEVICE FOR MANUFACTURING SAME
摘要 <p>The objective is to efficiently grow a high-purity nitride crystal with a low oxygen concentration by means of an ammonothermal method. This nitride crystal manufacturing method is characterized in that a reactive gas which reacts with ammonia to produce a mineralizer, and ammonia, are brought into contact in a reaction chamber or in a closed circuit connected to a reaction chamber, producing the mineralizer, and in the presence of the aforementioned ammonia and the aforementioned mineralizer a nitride crystal is grown by an ammonothermal method.</p>
申请公布号 WO2010079814(A1) 申请公布日期 2010.07.15
申请号 WO2010JP50118 申请日期 2010.01.07
申请人 MITSUBISHI CHEMICAL CORPORATION;TOHOKU UNIVERSITY;MIKAWA, YUTAKA;KIYOMI, MAKIKO;KAGAMITANI, YUJI;ISHIGURO, TORU 发明人 MIKAWA, YUTAKA;KIYOMI, MAKIKO;KAGAMITANI, YUJI;ISHIGURO, TORU
分类号 C30B9/06;B01J3/00;C30B7/10;C30B7/14 主分类号 C30B9/06
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