SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed is a semiconductor device with a built-in resistance change element that makes it possible to increase reliability, increase density, and decrease electrode resistance. Disclosed is a semiconductor device that has a resistance change element inside a multilayer wiring layer on a semiconductor substrate, wherein the resistance change element is configured with a resistance change element film, the resistance of which changes, interposed between an upper electrode and a lower electrode, and wherein the multilayer wiring layer is equipped with at least wiring that is electrically connected to the lower electrode and a plug that is electrically connected to the upper electrode, and wherein a barrier metal covers the side surfaces and bottom of the plug, and the topmost part of the upper electrode directly contacts with the barrier metal, and is configured from the same material as the barrier metal, or a material that contains the same constituents as the constituents contained in the barrier metal.