| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing unevenness of fatigue characteristics of a ferroelectric capacitor. SOLUTION: The semiconductor device has a lower electrode 18b of a capacitor formed above a semiconductor substrate 1 and having metal, the dielectric film of the capacitor Q formed on the lower electrode 18b, the upper electrode of the capacitor Q formed on the dielectric film and electrically connected to an active element, an insulating film covering the capacitor Q, and a hole formed on the contact region 25c of the lower electrode, and the distance between the hole and upper electrode 19b is determined on the basis of the relation to the hole diameter or hole area. COPYRIGHT: (C)2010,JPO&INPIT |
