| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be applied to a micro device without increasing manufacturing processes, and of which an operating voltage is stable. Ž<P>SOLUTION: The semiconductor device includes an active region which is formed on one main surface of the semiconductor substrate 1 and conducts a main current, an electron beam irradiation region formed on the active region. A metal wiring layer is formed so as to cover a channel region in the active region and a gate oxide film abutting on the channel region. The metal wiring layer is structured so as to shield an electron beam having irradiation energy of 0.1-10 MeV on a channel region and the gate oxide film abutting on the channel region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
