| 摘要 |
Field-effect transistor that includes at least a gate, a layer of insulator, a drain, a source, a semi-conductor material connecting the source to the drain, the gate and the layer of insulator each surrounding the assembly constituted by the source, the drain and the semi-conductor material, the layer of insulator being arranged between the gate and said assembly. The drain and the source are constituted by first and second electrical conductors respectively, arranged in a parallel way and disconnected one from the other, the first and second conductors being surrounded by a layer of semi-conductor over their entire circumference and over at least a part of their length.
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