VERTICAL DIODE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a vertical diode which is thin in thickness and has both low forward resistance and a high backward breakdown voltage and a method of manufacturing the same, and a semiconductor memory device using the vertical diode. SOLUTION: In the vertical diode 1, an N+-type layer 11, an N--type layer 12, and a P+-type layer 13 are stacked in this order on a lower electrode film 10, and an upper electrode film 20 is provided thereon. The effective impurity concentration of the N--type layer 12 is made lower than the effective impurity concentrations of the N+-type layer 11 and the P+-type layer 13. Each of the N+-type layer 11, the N--type layer 12, and the P+-type layer 13 is formed from small grain size polycrystalline silicon whose each crystal grain does not penetrate each layer through its thickness. COPYRIGHT: (C)2010,JPO&INPIT