发明名称 |
Non-volatile memory device having stacked structure, and memory card and electronic system including the same |
摘要 |
Provided are a non-volatile memory devices having a stacked structure, and a memory card and a system including the same. A non-volatile memory device may include a substrate. A stacked NAND cell array may have at least one NAND set and each NAND set may include a plurality of NAND strings vertically stacked on the substrate. At least one signal line may be arranged on the substrate so as to be commonly coupled with the at least one NAND set.
|
申请公布号 |
US2010177566(A1) |
申请公布日期 |
2010.07.15 |
申请号 |
US20100656043 |
申请日期 |
2010.01.14 |
申请人 |
KIM WON-JOO;PARK YOON-DONG;SUNG JUNG-HUN;KYOUNG YONG-KOO;CHOI SANG-MOO;LEE TAE-HEE |
发明人 |
KIM WON-JOO;PARK YOON-DONG;SUNG JUNG-HUN;KYOUNG YONG-KOO;CHOI SANG-MOO;LEE TAE-HEE |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|