| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist composition suitable for short wavelength lithography such as electron beam lithography or EUV lithography, and forming patterns having good pattern shape, high sensitivity and high resolution. <P>SOLUTION: The photoresist composition includes: a resin (A) including a repeating unit having an acid-labile group in its side chain and a (meth)acrylate unit having a lactone structure in its side chain; a resin (B) including a repeating unit having an acid-labile group in its side chain and a repeating unit represented by formula (III); and an acid generator that generates an acid when exposed to light. In formula (III), R<SP>6</SP>represents a hydrogen atom or a methyl group; R<SP>7</SP>represents a 1-6Calkyl group; n represents an integer of 0-4; each of R<SP>7</SP>s may be the same as or different from each other when n is an integer of 2 or larger. <P>COPYRIGHT: (C)2010,JPO&INPIT |
