| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a dielectric thin-film element capable of sufficiently increasing insulation resistance while preventing oxidation of metal foil. Ž<P>SOLUTION: This method of manufacturing the dielectric thin-film element includes: a baking process S3 of heating a dielectric thin film 12 formed on the metal foil 11 to 400-1,200°C in a vacuum atmosphere or reductive atmosphere; a reductive annealing process S4 of executing an annealing process in a reductive atmosphere after the baking process S3. Thereby, leak current can be reduced while preventing oxidation of the metal foil, and insulation resistance can be sufficiently increased. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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